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New RTDs with enhanced operation based on black phosphorus–graphene heterostructures and a semianalytical vdW tunneling modelJournal of computational electronics5 dayssaveRefWorksSFX Info
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The effect of edge functionalization on the device performance of monolayer Si 0.5 Ge 0.5 nanoribbon transistorsJournal of computational electronics13 dayssaveRefWorksSFX Info
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