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New RTDs with enhanced operation based on black phosphorus–graphene heterostructures and a semianalytical vdW tunneling modelJournal of computational electronics41 dayssaveRefWorksSFX Info
Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge 1−x−y Si x Sn y /Ge 1−a−b Si a Sn b heterojunctionJournal of computational electronics44 dayssaveRefWorksSFX Info
TCAD modeling of neuromorphic systems based on ferroelectric tunnel junctionsJournal of computational electronics45 dayssaveRefWorksSFX Info
Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenidesJournal of computational electronics48 dayssaveRefWorksSFX Info
The effect of edge functionalization on the device performance of monolayer Si 0.5 Ge 0.5 nanoribbon transistorsJournal of computational electronics50 dayssaveRefWorksSFX Info
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Modifying quantum Grover’s algorithm for dynamic multi-pattern search on reconfigurable hardwareJournal of computational electronics113 dayssaveRefWorksSFX Info
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