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New RTDs with enhanced operation based on black phosphorus–graphene heterostructures and a semianalytical vdW tunneling modelJournal of computational electronics41 dayssaveRefWorksSFX Info
Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge 1−x−y Si x Sn y /Ge 1−a−b Si a Sn b heterojunctionJournal of computational electronics44 dayssaveRefWorksSFX Info
TCAD modeling of neuromorphic systems based on ferroelectric tunnel junctionsJournal of computational electronics45 dayssaveRefWorksSFX Info
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The effect of edge functionalization on the device performance of monolayer Si 0.5 Ge 0.5 nanoribbon transistorsJournal of computational electronics50 dayssaveRefWorksSFX Info
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Modifying quantum Grover’s algorithm for dynamic multi-pattern search on reconfigurable hardwareJournal of computational electronics113 dayssaveRefWorksSFX Info
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