Manipulation of Topological Edge States : How Stoichiometric Changes and Surface Manipulation Influence the Dirac Cone of Topological Insulators

Abstract; Zusammenfassung; Contents; List of Figures; List of Tables; 1. Introduction; Part I. Theoretical Basics of STM, PES and TIs; 2. Scanning Tunneling Microscopy; 3. Photoemission Spectroscopy; 4. Topological Insulators; Part II. Experimental Setup and Results; 5. Experimental Setup; 6. Reducing the Doping Effect of Fe atoms on Bi2Se3; 7. Characterization of PbBi4Te7; 8. TES Shift in TlBiSe2; 9. QPI Mapping of Bi/Bi2Se3; 10. Conclusion and Outlook; Part III. Appendix; A. Additional Notes on Fe/Bi2Se3; B. Additional Notes on Bi/Bi2Se3; Bibliography; Publications ; Abbrevations.